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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 5.2 i d @ v gs = 12v, t c = 100c continuous drain current 3.3 i dm pulsed drain current 20.8 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 142 mj i ar avalanche current 5.2 a e ar repetitive avalanche energy 2.5 mj dv/dt peak d iode recovery dv/dt 6.8 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in./1.6mm from case for 10s) weight 0.98(typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1 to-39 product summary part number radiation level r ds(on) i d irhf57234se 100k rads (si) 0.42 ? 5.2a features: single event effect (see) hardened ultra low r ds(on) identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed radiation hardened irhf57234se power mosfet 250v, n-channel thru-hole (to-39) technology pd-93831b irhf57234se pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 5.0 r thja junction-to-ambient ? 175 ? c/w note: corresponding spice and saber models are available on international rectifier website. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 250 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.31 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.42 ? v gs = 12v, i d = 3.3a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 4.0 ? ? s v ds >= 15v, i ds = 3.3a i dss zero gate voltage drain current ? ? 10 v ds = 200v ,v gs =0v ??25 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 32 v gs =12v, i d = 5.2a q gs gate-to-source charge ? ? 11 nc v ds = 125v q gd gate-to-drain (?miller?) charge ? ? 16 t d (on) turn-on delay time ? ? 25 v dd = 125v, i d = 5.2a t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 40 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 1007 ? v gs = 0v, v ds = 25v c oss output capacitance ? 155 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 8 ? na nh ns a source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 5.2 i sm pulse source current (body diode) ? ? 20.8 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 5.2a, v gs = 0v t rr reverse recovery time ? ? 287 ns t j = 25c, i f = 5.2a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.3 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a www.irf.com 3 irhf57234se table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 250 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds = 200v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.402 ? v gs = 12v, i d = 3.3a r ds(on) static drain-to-source v sd diode forward voltage ? 1.5 v v gs = 0v, i d = 5.2a on-state resistance (to-39) ? 0.42 ? v gs = 12v, i d = 3.3a 0 50 100 150 200 250 300 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5% table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 250 250 250 250 250 61 5% 330 7.5% 31 10% 250 250 250 250 240 84 5% 350 10% 28 7.5% 250 250 225 175 50 irhf57234se pre-irradiation 4 www.irf.com 15 0.001 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 5.4a i d ? drain-to-source current (a) 0.01 5.2a www.irf.com 5 irhf57234se ! ! " " " #$ pre-irradiation 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 50 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 5.4a v = 50v ds v = 125v ds v = 200v ds 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 5.2a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc irhf57234se pre-irradiation 6 www.irf.com $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* " 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 7 irhf57234se q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation 25 50 75 100 125 150 0 50 100 150 200 250 300 350 e , single pulse avalanche energy (mj) as i d top bottom 2.3a 3.3a 5.2a starting t j , junction temperature (c) irhf57234se pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 10.5 mh peak i l = 5.2a, v gs = 12v i sd 5.2a, di/dt 307a/ s, v dd 250v, t j 150c footnotes: case outline and dimensions ? to-205af (modified to-39) ! " # ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/2010 |
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